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RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Typical Performance: VDD = 50 Volts, IDQ = 100 mA
| Category | Discrete Semiconductor Products |
| Transistors - FETs, MOSFETs - RF | |
| Mfr | NXP USA Inc. |
| Transistor Type | LDMOS (Dual) |
| Frequency | 230MHz |
| Gain | 24dB |
| Voltage - Test | 50 V |
| | |
| Current - Test | 100 mA |
| Power - Output | 1250W |
| Voltage - Rated | 133 V |
| Package / Case | NI-1230 |
RF Power LDMOS Transistors-MRFE6VP61K25HR5 NXP RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 24dB 1250W NI-1230
More similar part number:
MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5
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