RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETsThese high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Typical Performance: VDD = 50 Volts, IDQ = 100 mA Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - RF Mfr NXP USA Inc. Transistor Type
The ATtiny261A/ATtiny461A/ATtiny861A of microchip provides the following features: 2/4/8K byte of In-System Programmable Flash, 128/256/512 bytes EEPROM, 128/256/512 bytes SRAM, 16 general purpose I/O lines, 32 general purpose working registers, an 8-bit Timer/Counter with compare modes, an 8- bit high speed Timer/Counter, a Universal Serial Interface, Internal and External Interrupts, an 11-channel, 10-bit ADC, a programmable Watchdog Timer with internal oscillator, and four software selectable power saving modes. Idle mode stops the CPU while allowing the SRAM, Timer/Counter, ADC,
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